Semiconductor device

ABSTRACT

A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; third and fourth electrodes inside a trench of the semiconductor part, the fourth electrode being provided between the first electrode and the third electrode; a first insulating portion electrically insulating the third electrode from the semiconductor part; a second insulating portion electrically insulating the third electrode from the second electrode; a third insulating portion electrically insulating the fourth electrode from the semiconductor part; a fourth insulating portion electrically insulating the fourth electrode from the third electrode; and a fifth insulating portion including a first portion and a second portion, the first portion being provided inside the fourth electrode, the second portion extending outward of the fourth electrode. The second portion extends from the first portion in a first direction from the first electrode toward the second electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 17/005,694filed Aug. 28, 2020 and is based upon and claims the benefit of priorityfrom Japanese Patent Application No. 2019-235773, filed on Dec. 26,2019; the entire contents of which are incorporated herein by reference.

FIELD

Embodiments relate to a semiconductor device.

BACKGROUND

It is desirable for a semiconductor device for power control to have ahigh breakdown voltage and a low ON-resistance. For example, a highbreakdown voltage and a low ON-resistance are achieved in a MOSFEThaving a trench gate structure in which a field plate is provided insidea gate trench in addition to a gate electrode. However, there are caseswhere disposing the field plate inside the gate trench makes thesource-gate parasitic capacitance to increase.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view showing a semiconductordevice according to an embodiment;

FIGS. 2A to 7B are schematic cross-sectional views showing manufacturingprocesses of the semiconductor device according to the embodiment;

FIG. 8 is a schematic cross-sectional view showing a semiconductordevice according to a first modification of the embodiment;

FIGS. 9A to 9C are schematic cross-sectional views showing manufacturingprocesses of the semiconductor device according to the firstmodification of the embodiment;

FIG. 10 is a schematic cross-sectional view showing a semiconductordevice according to a second modification of the embodiment;

FIGS. 11A to 12B are schematic cross-sectional views showingmanufacturing processes of the semiconductor device according to thesecond modification of the embodiment;

FIG. 13 is a schematic cross-sectional view showing a semiconductordevice according to a third modification of the embodiment; and

FIGS. 14A and 14B are schematic cross-sectional views showingmanufacturing processes of the semiconductor device according to thethird modification of the embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor device includes asemiconductor part; a first electrode on a back surface of thesemiconductor part; a second electrode on a front surface of thesemiconductor part; a third electrode provided between the semiconductorpart and the second electrode, the semiconductor part having a trench atthe front surface side, the third electrode being provided inside thetrench of the semiconductor part; a fourth electrode provided inside thetrench of the semiconductor part, the fourth electrode being providedbetween the first electrode and the third electrode; a first insulatingportion electrically insulating the third electrode from thesemiconductor part; a second insulating portion electrically insulatingthe third electrode from the second electrode; a third insulatingportion electrically insulating the fourth electrode from thesemiconductor part; a fourth insulating portion electrically insulatingthe fourth electrode from the third electrode; and a fifth insulatingportion including a first portion and a second portion, the firstportion being provided inside the fourth electrode, the second portionextending outward of the fourth electrode, the second portion extendingfrom the first portion in a first direction from the first electrodetoward the second electrode. The semiconductor part includes a firstsemiconductor layer of a first conductivity type, a second semiconductorlayer of a second conductivity type, and a third semiconductor layer ofthe first conductivity type. The first semiconductor layer extendsbetween the first and second electrodes. The second semiconductor layeris provided between the first semiconductor layer and the secondelectrode, the second semiconductor layer facing the third electrode viathe first insulating portion. The third semiconductor layer isselectively provided between the second semiconductor layer and thesecond electrode, the third semiconductor layer contacting the firstinsulating portion and being electrically connected to the secondelectrode.

Embodiments will now be described with reference to the drawings. Thesame portions inside the drawings are marked with the same numerals; adetailed description is omitted as appropriate; and the differentportions are described. The drawings are schematic or conceptual; andthe relationships between the thicknesses and widths of portions, theproportions of sizes between portions, etc., are not necessarily thesame as the actual values thereof. The dimensions and/or the proportionsmay be illustrated differently between the drawings, even in the casewhere the same portion is illustrated.

There are cases where the dispositions of the components are describedusing the directions of XYZ axes shown in the drawings. The X-axis, theY-axis, and the Z-axis are orthogonal to each other. Hereinbelow, thedirections of the X-axis, the Y-axis, and the Z-axis are described as anX-direction, a Y-direction, and a Z-direction. Also, there are caseswhere the Z-direction is described as upward and the direction oppositeto the Z-direction is described as downward.

FIG. 1 is a schematic cross-sectional view showing a semiconductordevice 1 according to an embodiment. The semiconductor device 1 is, forexample, a trench-gate MOSFET.

The semiconductor device 1 includes a semiconductor part 10, a firstelectrode (e.g., a drain electrode 20), a second electrode (e.g., asource electrode 30), a third electrode (e.g., a gate electrode 40), anda fourth electrode (e.g., a field plate 50).

The semiconductor part 10 is provided between the drain electrode 20 andthe source electrode 30. The semiconductor part 10 is, for example,silicon.

The drain electrode 20 is provided on the back surface of thesemiconductor part 10. The drain electrode 20 is, for example, a metallayer including titanium, aluminum, gold, etc. There are cases where thedrain electrode 20 is formed to have a continuous body with a metalmaterial on a mounting substrate.

For example, the source electrode 30 is provided on the front surface ofthe semiconductor part 10. The source electrode 30 is, for example, ametal layer including aluminum.

For example, the gate electrode 40 is provided between the semiconductorpart 10 and the source electrode 30. The gate electrode 40 is disposedinside a gate trench GT provided in the semiconductor part 10. The gateelectrode 40 is, for example, conductive polysilicon.

The gate electrode 40 includes, for example, a first control portion 40a, a second control portion 40 b, and a middle portion 40 c. The firstcontrol portion 40 a, the second control portion 40 b, and the middleportion 40 c are arranged in the lateral direction (e.g., theX-direction). The middle portion 40 c is provided between the firstcontrol portion 40 a and the second control portion 40 b. For example,the first control portion 40 a, the second control portion 40 b, and themiddle portion 40 c are electrically connected to each other at aportion not-illustrated.

The field plate 50 (hereinbelow, the FP 50) is provided inside the gatetrench GT with the gate electrode 40. The FP 50 is provided between thedrain electrode 20 and the gate electrode 40. The gate electrode 40 isprovided between the source electrode 30 and the FP 50. The FP 50 is,for example, conductive polysilicon. The FP 50 is electrically connectedto the source electrode 30 at a portion not-illustrated.

As shown in FIG. 1, the semiconductor device 1 further includes a firstinsulating portion 43, a second insulating portion 45, a thirdinsulating portion 51, a fourth insulating portion 53, and a fifthinsulating portion 55.

The first insulating portion 43 electrically insulates the gateelectrode 40 from the semiconductor part 10. The first insulatingportion 43 is provided between the semiconductor part 10 and the firstcontrol portion 40 a and between the semiconductor part 10 and thesecond control portion 40 b. The first insulating portion 43 serves as agate insulating film. The first insulating portion 43 is, for example, asilicon oxide film.

The second insulating portion 45 electrically insulates the gateelectrode 40 from the source electrode 30. The second insulating portion45 is, for example, an inter-layer insulating film provided between thesource electrode 30 and the gate electrode 40. The second insulatingportion 45 is, for example, a silicon oxide film.

The third insulating portion 51 is provided between the semiconductorpart 10 and the FP 50. The third insulating portion 51 electricallyinsulates the FP 50 from the semiconductor part 10. The third insulatingportion 51 is, for example, a silicon oxide film.

The fourth insulating portion 53 is provided between the FP 50 and thefirst control portion 40 a of the gate electrode 40 and between the FP50 and the second control portion 40 b of the gate electrode 40. Thefourth insulating portion 53 electrically insulates the FP 50 from thegate electrode 40. The fourth insulating portion 53 also is providedbetween the first control portion 40 a and the middle portion 40 c andbetween the second control portion 40 b and the middle portion 40 c. Thefourth insulating portion 53 is, for example, a silicon oxide film.

The fifth insulating portion 55 includes a first portion 55 a that isprovided inside the FP 50, and a second portion 55 b extending outwardof the FP 50. The second portion is provided to extend in theZ-direction from the first portion 55 a inside the FP 50. The secondportion 55 b is provided between the gate electrode 40 and the firstportion 55 a. The second portion 55 b serves as a spacer between thegate electrode 40 and the FP 50. The second portion 55 b reduces theparasitic capacitance between the gate electrode 40 and the FP 50. Thefifth insulating portion 55 is, for example, so-called BPSG, i.e.,silicate glass including boron and phosphorus. For example, the FP 50has a U-shaped cross section, and the first portion 55 a of the fifthinsulating portion 55 is inside the FP 50.

As shown in FIG. 1, the semiconductor part 10 includes, for example, ann-type drift layer 11, a p-type diffusion layer 13, an n-type sourcelayer 15, a p-type contact layer 17, and an n-type drain layer 19.

The n-type drift layer 11 includes a low-concentration n-type impurity.The n-type drift layer 11 has a thickness that can provide the desiredbreakdown voltage in the OFF-state of the semiconductor device 1. The FP50 is positioned inside the n-type drift layer 11 and faces the n-typedrift layer 11 via the third insulating portion 51.

The p-type diffusion layer 13 is provided between the n-type drift layer11 and the source electrode 30. The p-type diffusion layer 13 faces thefirst control portion 40 a and the second control portion 40 b of thegate electrode 40 via the first insulating portion 43.

The n-type source layer 15 is selectively provided between the p-typediffusion layer 13 and the source electrode 30. The n-type source layer15 is provided to contact the first insulating portion 43. The n-typesource layer 15 includes an n-type impurity with a higher concentrationthan a concentration of the n-type impurity in the n-type drift layer11.

The p-type contact layer 17 is selectively provided between the p-typediffusion layer 13 and the source electrode 30. The p-type contact layer17 includes a p-type impurity with a higher concentration than aconcentration of the p-type impurity in the p-type diffusion layer 13.

For example, the source electrode 30 contacts the n-type source layer 15and the p-type contact layer 17 and is electrically connected thereto.The source electrode 30 is electrically connected to the p-typediffusion layer 13 via the p-type contact layer 17.

The n-type drain layer 19 is provided between the n-type drift layer 11and the drain electrode 20. The n-type drain layer 19 includes an n-typeimpurity with a higher concentration than the concentration of then-type impurity in the n-type drift layer 11. For example, the drainelectrode 20 contacts the n-type drain layer 19 and is electricallyconnected thereto.

A method for manufacturing the semiconductor device 1 according to theembodiment will now be described with reference to FIG. 2A to FIG. 7B.FIGS. 2A to 7B are schematic cross-sectional views showing manufacturingprocesses of the semiconductor device 1.

As shown in FIG. 2A, the gate trench GT is formed in a semiconductorwafer 100; subsequently, an insulating film 105 that covers the innersurface of the gate trench GT is formed. The semiconductor wafer 100 is,for example, an n-type silicon wafer. The semiconductor wafer 100includes an n-type impurity with the same concentration as theconcentration of the n-type impurity in the n-type drift layer 11.

For example, the gate trench GT is formed by selectively removing thesemiconductor wafer by using anisotropic RIE (Reactive Ion Etching). Forexample, the insulating film 105 is formed by thermal oxidation of thesemiconductor wafer 100. The insulating film 105 is, for example, asilicon oxide film. The insulating film 105 is formed so that a spaceSP1 remains inside the gate trench GT.

As shown in FIG. 2B, a conductive film 110 is formed on the insulatingfilm 105. The conductive film 110 is formed inside the gate trench GT tocover the insulating film 105 so that a space SP2 remains.

The conductive film 110 is, for example, a polysilicon film formed usingCVD (Chemical Vapor Deposition). The conductive film 110 includes, forexample, an n-type impurity doped by vapor phase diffusion.Alternatively, the conductive film 110 may include, for example, ann-type impurity doped in the deposition process.

As shown in FIG. 3A, an insulating film 115 is formed to fill the spaceSP2 inside the gate trench GT (referring to FIG. 2B). The insulatingfilm 115 is, for example, a BPSG film deposited by using CVD. After theinsulating film 115 is formed, heat treatment of the insulating film 115is performed at a temperature higher than the softening point of theBPSG film so that voids and the like do not remain inside the gatetrench GT.

As shown in FIG. 3B, the insulating film 115 is removed so that aportion of the insulating film 115 remains inside the gate trench GT.The insulating film 115 is selectively removed using, for example, dryetching so that the front surface of the conductive film 110 is exposed.

As shown in FIG. 4A, the conductive film 110 is selectively removed sothat a portion of the conductive film 110 remains inside the gate trenchGT. For example, the conductive film 110 is removed so that an upper end110T of the portion remaining inside the gate trench GT is provided atthe same level in the Z direction as a front surface 100 f of thesemiconductor wafer 100.

As shown in FIG. 4B, the insulating film 105 and the insulating film 115are selectively removed so that portions of the insulating film 105 andthe insulating film 115 remain inside the gate trench GT. Thereby, thethird insulating portion 51 and the fifth insulating portion 55 areformed inside the gate trench GT. An upper end 51T of the thirdinsulating portion 51 and an upper end 55T of the fifth insulatingportion 55 are positioned at a lower level than the front surface 100 fof the semiconductor wafer 100.

For example, the insulating films 105 and 115 are selectively removed bywet etching. For example, the etching of the insulating films 105 and115 is performed at conditions such that the etching rate of theinsulating film 105 is faster than the etching rate of the insulatingfilm 115. Therefore, the upper end 55T of the fifth insulating portion55 is provided at a higher level than the upper end 51T of the thirdinsulating portion 51.

As shown in FIG. 5A, the first insulating portion 43 is formed bythermal oxidation of the semiconductor wafer 100. Simultaneously, thefourth insulating portion 53 is formed by the thermal oxidation at aportion of the conductive film 110 extending between the thirdinsulating portion 51 and the fifth insulating portion 55. Thereby, theFP 50 is formed at the lower portion of the gate trench GT. The firstinsulating portion 43 and the fourth insulating portion 53 are, forexample, silicon oxide films.

For example, the film thickness of the conductive film 110 is set sothat the entire portion of the conductive film 110 exposed in the spaceinside the gate trench GT is oxidized in the thermal oxidation processfor forming the first insulating portion 43. In other words, the filmthickness of the conductive film 110 is set so that the entire exposedportion of the conductive film 110 undergoes thermal oxidation whenusing conditions forming a thermal oxide film so that the firstinsulating portion 43 has a thickness that can serves as the gateinsulating film.

For example, the thermal oxidation of the semiconductor wafer 100 andthe conductive film 110 is performed at a temperature that is higherthan the softening point of the BPSG included in the fifth insulatingportion 55. Therefore, the second portion 55 b of the fifth insulatingportion 55 is compressed by the volume expansion due to the thermaloxidation of the exposed portion of the conductive film 110. As aresult, for example, the width in the X-direction of the second portion55 b of the fifth insulating portion 55 is less than the width in theX-direction of the first portion 55 a.

The first insulating portion 43 and the fourth insulating portion 53 areformed in the upper portion of the gate trench GT so that spaces SG andSP3 remain. The space SG is formed between the first insulating portion43 and the fourth insulating portion 53. Also, the space SG is formed onthe third insulating portion 51. For example, the width in theX-direction of the space SG is less than the width in the X-direction ofthe third insulating portion 51. The space SP3 is formed on the secondportion 55 b of the fifth insulating portion 55.

As shown in FIG. 5B, the gate electrode 40 is formed to fill the spacesSG and SP3 at the upper portion of the gate trench GT. The gateelectrode 40 includes the first control portion 40 a, the second controlportion 40 b, and the middle portion 40 c. The first control portion 40a and the second control portion 40 b are formed to fill the spaces SG,and the middle portion 40 c is formed to fill the space SP3. The gateelectrode 40 is, for example, conductive polysilicon. For example, thewidths in the X-direction of the first control portion 40 a and thesecond control portion 40 b are less than the width in the X-directionof the third insulating portion 51.

As shown in FIG. 6A, the p-type diffusion layer 13 and the n-type sourcelayer 15 are formed at the front surface of the semiconductor wafer 100.

The p-type diffusion layer 13 is formed by ion-implanting a p-typeimpurity, e.g., boron (B) into the semiconductor wafer 100 and byperforming thermal diffusion. The p-type diffusion layer 13 is formed sothat the lower surface of the p-type diffusion layer 13 is positioned atthe same level in the Z direction as the lower ends of the first controlportion 40 a and the second control portion 40 b of the gate electrode40 or at a higher level than the lower ends thereof.

The n-type source layer 15 is formed by ion-implanting an n-typeimpurity, e.g., phosphorus (P) into the semiconductor wafer 100. Then-type source layer 15 is formed so that the lower surface of the n-typesource layer 15 is at a higher level in the Z direction than the lowersurface of the p-type diffusion layer 13.

The p-type diffusion layer 13 and the n-type source layer 15 contact thefirst insulating portion 43. The p-type diffusion layer 13 faces thefirst control portion 40 a and the second control portion 40 b of thegate electrode 40 via the first insulating portion 43.

As shown in FIG. 6B, the second insulating portion 45 is formed on thegate electrode 40. The second insulating portion 45 is, for example, asilicon oxide film formed using CVD. For example, after a silicon oxidefilm is formed on the semiconductor wafer 100, the silicon oxide film isselectively removed to expose the n-type source layer 15 and to make theportion covering the gate electrode 40 remain. At this time, a portionof the first insulating portion 43 covering the n-type source layer 15also is removed.

As shown in FIG. 7A, a contact trench CT is formed by selectivelyremoving a portion of the n-type source layer 15. At this time, forexample, the p-type diffusion layer 13 is exposed at the bottom surfaceof the contact trench CT.

Continuing, the p-type contact layer 17 is formed on the p-typediffusion layer 13 by ion-implanting a p-type impurity, e.g., boron (B)into the front surface of the semiconductor wafer 100. The p-typecontact layer 17 is formed so that the lower surface of the p-typecontact layer 17 is provided at a higher level in the Z direction thanthe lower surface of the p-type diffusion layer 13.

As shown in FIG. 7B, the source electrode 30 is formed at the frontsurface of the semiconductor wafer 100. The source electrode 30 is, forexample, a metal film including aluminum which is formed usingsputtering.

The source electrode 30 covers the n-type source layer 15 and the secondinsulating portion 45 and extends inside the contact trench CT. Thesource electrode 30 contacts the n-type source layer 15 and the p-typecontact layer 17. Also, the source electrode 30 is electricallyconnected to the FP 50 at a portion not-illustrated.

Continuing, the n-type drain layer 19 is formed after thinning the backsurface of the semiconductor wafer 100 to a prescribed thickness byetching or polishing (referring to FIG. 1). The n-type drain layer 19 isformed by ion-implanting an n-type impurity, e.g., phosphorus (P) intothe back surface of the semiconductor wafer 100.

The semiconductor device 1 is completed by forming the drain electrode20 on the n-type drain layer 19. A portion of the semiconductor wafer100 remaining between the p-type diffusion layer 13 and the n-type drainlayer 19 is the n-type drift layer 11.

In the method for manufacturing the semiconductor device 1 according tothe embodiment, the distance is increased between the FP 50 and themiddle portion 40 c of the gate electrode 40 by the second portion 55 bof the fifth insulating portion 55 (referring to FIG. 1) that remains inthe manufacturing process shown in FIG. 4B. Also, the spacing isincreased respectively between the FP 50 and the first control portion40 a and between the FP 50 and the second control portion 40 b bythermally oxidizing the exposed portion of the conductive film 110 thatis expanded in volume. Thereby, it is possible to reduce the parasiticcapacitance between the gate electrode 40 and the FP 50, i.e., theparasitic capacitance between the gate electrode 40 and the sourceelectrode 30.

The surface area of the upper end of the FP 50 can be reduced byproviding the first portion 55 a of the fifth insulating portion 55inside the FP 50. Thereby, the parasitic capacitance between the gateelectrode 40 and the FP 50 can be reduced further.

FIG. 8 is a schematic cross-sectional view showing a semiconductordevice 2 according to a first modification of the embodiment. The gateelectrode 40 of the semiconductor device 2 includes the first controlportion 40 a and the second control portion 40 b but does not includethe middle portion 40 c (referring to FIG. 1). Thereby, the parasiticcapacitance between the gate electrode 40 and the FP 50 can be reducedfurther.

FIGS. 9A to 9C are schematic cross-sectional views showing manufacturingprocesses of the semiconductor device according to the firstmodification of the embodiment. The manufacturing processes shown inFIGS. 9A to 9C correspond to the manufacturing processes shown in FIG.4B to FIG. 5B.

As shown in FIG. 9A, the third insulating portion 51 and the fifthinsulating portion 55 are formed inside the gate trench GT byselectively removing the insulating films 105 and 115. A width WL in theX-direction of the fifth insulating portion 55 is formed to be narrowcompared to the width in the X-direction of the fifth insulating portion55 shown in FIG. 4B. Therefore, the width in the X-direction of thespace SP3 formed on the fifth insulating portion 55 also is reduced.

As shown in FIG. 9B, the first insulating portion 43 and the fourthinsulating portion 53 are formed by the thermal oxidation of thesemiconductor wafer 100 and the exposed portion of the conductive film110. In this process, the space SP3 that is provided on the fifthinsulating portion 55 is plugged. In other words, the space SP3 isplugged due to the volume expansion of the fourth insulating portion 53because the width in the X-direction of the space SP3 is narrow. Forexample, the fifth insulating portion 55 is formed so that the width inthe X-direction of the portion extending in the Z-direction toward theoutside of the FP 50 becomes narrower toward the tip.

As shown in FIG. 9C, the gate electrode 40 are formed by filling thefirst control portion 40 a and the second control portion 40 b into thespaces SG between the first insulating portion 43 and the fourthinsulating portion 53.

FIG. 10 is a schematic cross-sectional view showing a semiconductordevice 3 according to a second modification of the embodiment. The gateelectrode 40 of the semiconductor device 3 includes the first controlportion 40 a and the second control portion 40 b but does not includethe middle portion 40 c (referring to FIG. 1). The parasitic capacitancebetween the gate electrode 40 and the FP 50 can be reduced thereby.

The second portion 55 b of the fifth insulating portion 55 is connectedto the second insulating portion 45. The fourth insulating portion 53 ispositioned between the first control portion 40 a of the gate electrode40 and the second portion 55 b and between the second control portion 40b and the second portion 55 b.

FIG. 11A to FIG. 12B are schematic cross-sectional views showingmanufacturing processes of the semiconductor device 3 according to thesecond modification of the embodiment. The manufacturing processes shownin FIG. 11A to FIG. 12B correspond to the manufacturing processes shownin FIG. 4A to FIG. 5B.

As shown in FIG. 11A, the conductive film 110 is selectively removed sothat the portion of the conductive film 110 remains inside the gatetrench GT. At this stage, the insulating film 115 remains as the fifthinsulating portion 55 (referring to FIG. 3B).

As shown in FIG. 11B, the third insulating portion 51 is formed byselectively removing the insulating film 105. For example, theinsulating film 105 is selectively removed under the conditions at whichthe insulating film 115 is not etched. The insulating film 115 includesa material different from the insulating film 105. The insulating film105 is, for example, a silicon oxide film; and the insulating film 115is, for example, a silicon nitride film.

As shown in FIG. 12A, the first insulating portion 43 and the fourthinsulating portion 53 are formed by thermally oxidizing thesemiconductor wafer 100 and the exposed portion of the conductive film110. The fourth insulating portion 53 is provided between the firstinsulating portion 43 and the fifth insulating portion 55. The fourthinsulating portion 53 is formed so that the spaces SG remain between thefirst insulating portion 43 and the fourth insulating portion 53.

As shown in FIG. 12B, the gate electrode 40 is formed by filling thefirst control portion 40 a and the second control portion 40 b into thespaces SG. Continuing, the second insulating portion 45 is formed tocover the gate electrode 40 (referring to FIG. 10).

FIG. 13 is a schematic cross-sectional view showing a semiconductordevice 4 according to a third modification of the embodiment. The fifthinsulating portion 55 of the semiconductor device 4 includes, forexample, a void Vs provided inside the FP 50.

The void Vs is positioned inside the first portion 55 a of the fifthinsulating portion 55. In the semiconductor device 4, the stress of thestructure body formed inside the gate trench GT can be relaxed by thevoid Vs that remains therein. In the semiconductor device 3 as well, theparasitic capacitance between the gate electrode 40 and the FP 50 can bereduced by providing the fourth insulating portion 53 and the secondportion 55 b of the fifth insulating portion 55.

FIGS. 14A and 14B are schematic cross-sectional views showingmanufacturing processes of the semiconductor device 4 according to thethird modification of the embodiment. The manufacturing processes shownin FIGS. 14A and 14B correspond respectively to the manufacturingprocesses shown in FIG. 3A and FIG. 4B.

As shown in FIG. 14A, the insulating film 115 is formed to fill thespace SP2 inside the gate trench GT (referring to FIG. 2B). Theinsulating film 115 is, for example, a silicon nitride film or a siliconoxynitride film formed by CVD. For example, by increasing the depositionrate of the insulating film 115 at the upper portion of the space SP2,the upper portion of the space SP2 is plugged first, and the void Vsremains at the bottom portion of the gate trench GT.

As shown in FIG. 14B, the third insulating portion 51 and the fifthinsulating portion 55 are formed by selectively removing the insulatingfilms 105 and 115. The insulating films 105 and 115 are selectivelyremoved under the conditions such that the etching rate of theinsulating film 115 is slower than the etching rate of the insulatingfilm 105.

In the manufacturing method according to the embodiment, the insulatingfilm 115 that is to be the fifth insulating portion 55 is formed insidethe conductive film 110 that is to be the FP 50. Therefore, the filmthickness of the conductive film 110 can be thin compared to a case inwhich the entire space SP1 inside the gate trench GT (referring to FIG.2A) is filled with the conductive film 110. Thereby, it is possible toperform thermal oxidation of the entire exposed portion of theconductive film 110 (referring to FIG. 4B) in the process of forming thefirst insulating portion 43. In other words, a portion of the FP 50 canbe prevented from remaining between the first control portion 40 a andthe second control portion 40 b of the gate electrode 40; and, thus, theparasitic capacitance can be reduced between the gate electrode 40 andthe FP 50.

In the process of etching the conductive film 110 so that a portionprovided inside the gate trench GT remains (referring to FIG. 4A), athin conductive film 110 provided between the insulating film 105 andthe insulating film 115 is etched. Thereby, the control of the etchingamount of the conductive film 110 is easy. Also, in the process offorming the third insulating portion 51 and the fifth insulating portion55 by selectively removing the insulating films 105 and 115 (referringto FIG. 4B), similarly, the control of the etching amount is easy. As aresult, it is possible to improve the reproducibility in the shape ofthe gate electrode 40.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor device, comprising: a firstelectrode; a second electrode; a semiconductor part provided between thefirst electrode and the second electrode; a third electrode provided inthe semiconductor part, the third electrode being positioned between thefirst electrode and the second electrode; a fourth electrode provided inthe semiconductor part, the fourth electrode being positioned betweenthe first electrode and the third electrode; a first insulating portionprovided between the semiconductor part and the third electrode, thefirst insulating portion electrically insulating the third electrodefrom the semiconductor part; a second insulating portion providedbetween the second electrode and the third electrode, the secondinsulating portion electrically insulating the third electrode from thesecond electrode, a third insulating portion provided between the fourthelectrode and the semiconductor part, the third insulating portionelectrically insulating the fourth electrode from the semiconductorpart; a fourth insulating portion provided between the third electrodeand the fourth electrode, the fourth insulating portion electricallyinsulating the fourth electrode from the third electrode; and a fifthinsulating portion provided inside the fourth electrode, the fourthelectrode including a first portion, a second portion and a thirdportion, the fifth insulating portion being provided between the firstportion and the second portion, the third portion being provided betweenthe first electrode and the fifth insulating portion, the third portionbeing connected to the first portion and the second portion, the thirdelectrode including a first control portion and a second controlportion, the first and second control portions being arranged in asecond direction crossing a first direction, the first direction beingdirected from the first electrode toward the second electrode, thefourth insulating portion including an extending portion providedbetween the first control portion and the second control portion of thethird electrode, the extending portion of the fourth insulating portionextending toward the second insulating portion and contacting the secondinsulating portion.
 2. The device according to claim 1, wherein thefifth insulating portion extends toward the second insulating portionand has a tip positioned between the first control portion and thesecond control portion of the third electrode.
 3. The device accordingto claim 2, wherein the fourth electrode having a thickness in thesecond direction between the third insulating portion and the fifthinsulating portion; and a distance between the third electrode and thetip of the fifth insulating portion is greater than the thickness of thefourth electrode.
 4. The device according to claim 1, wherein the firstcontrol portion of the third electrode has a first width in the seconddirection; the second control portion of the third electrode has asecond width in the second direction; the third insulating portion has athird width from the fourth electrode to the semiconductor part; and thefirst and second widths is less than the third width in the seconddirection.
 5. The device according to claim 2, wherein the thirdelectrode further includes a middle portion provided between the firstcontrol portion and the second control portion and between the secondinsulating portion and the fifth insulating portion.
 6. The deviceaccording to claim 5, wherein the middle portion of the third electrodecontacts the fifth insulating portion.
 7. The device according to claim1, wherein the second insulating portion is provided between the secondelectrode and the first control portion of the third electrode, betweenthe second electrode and the second control portion of the thirdelectrode, and between the second electrode and the fourth insulatingportion.
 8. The device according to claim 1, wherein the thirdinsulating portion includes silicon oxide, and the fifth insulatingportion is a silicate glass including boron and phosphorus.
 9. Thedevice according to claim 1, wherein the semiconductor part includes afirst semiconductor layer of a first conductivity type, a secondsemiconductor layer of a second conductivity type, and a thirdsemiconductor layer of the first conductivity type, the firstsemiconductor layer extending between the first and second electrodes,the second semiconductor layer being provided between the firstsemiconductor layer and the second electrode, the second semiconductorlayer facing the third electrode via the first insulating portion, thethird semiconductor layer being selectively provided between the secondsemiconductor layer and the second electrode, the third semiconductorlayer contacting the first insulating portion and being electricallyconnected to the second electrode.